VS-VSKT152/04pbf www.vishay.com vishay semiconductors revision: 11-apr-14 1 document number: 94514 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thyristor/thyristor, 150 a (new int-a-pak power module) features ? electrically isolated by dbc ceramic (ai 2 o 3 ) ? 3500 v rms isolating voltage ? industrial standard package ? high surge capability ? glass passivated chips ? simple mounting ? ul approved file e78996 ? designed and qualifie d for multiple level ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? battery charges ? welders ? power converters electrical specifications product summary i t(av) 150 a type modules - thyr istor, standard package int-a-pak circuit two scrs doubler circuit new int-a-pak major ratings and characteristics symbol characteristics values units i t(av) 85 c 150 a i t(rms) 330 a i tsm 50 hz 4000 60 hz 4200 i 2 t 50 hz 80 ka 2 s 60 hz 73 i 2 ? t 800 ka 2 ? s v rrm 400 v t stg range -40 to 150 c t j range -40 to 125 voltage ratings type number v rrm /v drm , maximum repetitive peak reverse voltage v v rsm /v dsm , maximum non-repetitive peak reverse voltage v i rrm /i drm at 125 c ma VS-VSKT152/04pbf 400 500 50
VS-VSKT152/04pbf www.vishay.com vishay semiconductors revision: 11-apr-14 2 document number: 94514 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 on-state conduction parameter symbol test conditions values units maximum average on-state current ? at case temperature i t(av) 180 conduction half sine wave 150 a 85 c maximum rms on-state current i t(rms) as ac switch 330 a maximum peak, one-cycle ? on-state, non-repetitive ? surge current i tsm t = 10 ms no voltage ? reapplied sine half wave, ? initial t j = ? t j maximum 4000 t = 8.3 ms 4200 t = 10 ms 100 % v rrm ? reapplied 3350 t = 8.3 ms 3500 maximum i 2 t for fusing i 2 t t = 10 ms no voltage ? reapplied 80 ka 2 s t = 8.3 ms 73 t = 10 ms 100 % v rrm ? reapplied 56 t = 8.3 ms 51 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 800 ka 2 ? s value of threshold voltage v t(to) t j maximum 0.82 v on-state slope resistance r t 1.44 m ? maximum on-state voltage drop v tm i pk = ? x i t(av) , t j = 25 c 1.48 v maximum holding current i h t j = 25 c, anode supply = 6 v, ? resistive load, gate open circuit 200 ma maximum latching current i l t j = 25 c, anode supply = 6 v, resistive load 400 switching parameter symbol test conditions values units typical delay time t gd t j = 25 c gate current = 1 a, dl g /dt = 1 a/s ? v d = 0.67 % v drm 1 s typical rise time t gr 2 typical turn-off time t q i tm = 300 a, - dl/dt = 15 a/s; t j = t j maximum ? v r = 50 v; dv/dt = 20 v/s; gate 0 v, 100 ? 50 to 200 blocking parameter symbol test conditions values units maximum peak reverse and ? off-state leakage current i rrm, i drm t j = 125 c 50 ma rms insulation voltage v ins 50 hz, circuit to base, all te rminals shorted, t = 1 s 3500 v critical rate of rise of off-state voltage dv/dt t j = t j maximum, exponential to 67 % rated v drm 1000 v/s
VS-VSKT152/04pbf www.vishay.com vishay semiconductors revision: 11-apr-14 3 document number: 94514 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc ? ? ? triggering parameter symbol test conditions values units maximum peak gate power p gm t p ? 5 ms, t j = t j maximum 12 w maximum average gate power p g(av) f = 50 hz, t j = t j maximum 3 maximum peak gate current i gm t p ? 5 ms, t j = t j maximum 3a maximum peak negative ? gate voltage - v gt 10 v maximum required dc gate ? voltage to trigger v gt t j = - 40 c anode supply = 6 v, ? resistive load; r a = 1 ? 4 t j = 25 c 2.5 t j = t j maximum 1.7 maximum required dc gate ? current to trigger i gt t j = - 40 c 270 ma t j = 25 c 150 t j = t j maximum 80 maximum gate voltage ? that will not trigger v gd t j = t j maximum, rated v drm applied 0.3 v maximum gate current ? that will not trigger i gd 10 ma maximum rate of rise of ? turned-on current di/dt t j = t j maximum, i tm = 400 a rated v drm applied 300 a/s thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating ? temperature range t j - 40 to 125 c maximum storage ? temperature range t stg - 40 to 150 maximum thermal resistance, ? junction to case per junction r thjc dc operation 0.18 k/w maximum thermal resistance, ? case to heatsink per module r thcs mounting surface smooth, flat and greased 0.05 mounting ? torque 10 % iap to heatsink a mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. ? lubricated threads. 4 to 6 nm busbar to iap approximate weight 200 g 7.1 oz. case style int-a-pak ? r conduction per junction devices sinusoidal conduction at t j maximum rectangular conduction at t j maximum units 180 120 90 60 30 180 120 90 60 30 vskt152/04pbf 0.007 0.010 0.013 0.016 0.017 0.009 0.012 0.014 0.016 0.017 k/w
VS-VSKT152/04pbf www.vishay.com vishay semiconductors revision: 11-apr-14 4 document number: 94514 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current ra tings characteristics fig. 2 - current ra tings characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current ) c ( e r u t a r e p m e t e s a c e l b a w o l l a m u m i x a m average on-state current (a) 80 90 100 110 120 130 0 20406080100120140160 30? 60? 90? 120? 180? conduction angle vskt152 rthjc (dc) = 0.182 k/w average on-state current (a) ) c ( e r u t a r e p m e t e s a c e l b a w o l l a m u m i x a m 60 70 80 90 100 110 120 130 0 50 100 150 200 25 0 30? 60? 90? 180? dc 120? vskt152 rthjc (dc) = 0.182 k/w conduction period ) w ( s s o l r e w o p e t a t s - n o e g a r e v a m u m i x a m average on-state current (a) 0 20 40 60 80 100 120 140 160 180 200 220 0 20 40 60 80 100 120 140 16 0 rms limit conduction angle 180? 120? 90? 60? 30? vskt152 tj = 125?c ) w ( s s o l r e w o p e t a t s - n o e g a r e v a m u m i x a m average on-state current (a) 0 50 100 150 200 250 300 0 50 100 150 200 25 0 dc 180? 120? 90? 60? 30? rms limit conduction period vskt152 tj = 125?c number of equal amplitude half cycle current pulses (n) ) a ( t n e r r u c e t a t s - n o e v a w e n i s f l a h k a e p 1600 1800 2000 2200 2400 2600 2800 3000 3200 3400 3600 11010 0 at any rated load condition and with rated vrrm applied following surge. initial tj = 125?c @ 60 hz 0.0083 s @ 50 hz 0.0100 s vskt152 per junction pulse train duration (s) ) a ( t n e r r u c e t a t s - n o e v a w e n i s f l a h k a e p 1500 2000 2500 3000 3500 4000 4500 0.01 0.1 1 maximum non repetitive surge current of conduction may not be maintained. vskt152 per junction versus pulse train duration. control initial tj = 125?c no voltage reapplied rated vrrm reapplied
VS-VSKT152/04pbf www.vishay.com vishay semiconductors revision: 11-apr-14 5 document number: 94514 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - on-state powe r loss characteristics fig. 8 - on-state powe r loss characteristics fig. 9 - on-state powe r loss characteristics maximum allowable ambient temperature (c) ) w ( s s o l r e w o p e t a t s - n o l a t o t m u m i x a m total rms output current (a) 025507510012 5 0.04 k/w 0.08 k/w 0.12 k/w 0.16 k/w 0.4 k/w 0.25 k/ w 0.6 k/w 1 k/w rthsa = 0.01 k/w - del ta r 0 100 200 300 400 500 0 50 100 150 200 250 300 350 180? 120? 90? 60? 30? conduction angle vskt152 per module tj = 125?c ) w ( s s o l r e w o p l a t o t m u m i x a m total output current (a) maximum allowable ambient temperature (c) 0255075100125 0.04 k/w 0.12 k/ w 0.2 k/w 0.35 k/ w 0.6 k/w rthsa = 0. 01 k/w - delta r 0.08 k/w 0 100 200 300 400 500 600 700 800 900 0 50 100 150 200 250 300 2 x vskt152 single phase bridge connected tj = 125?c 180? (sine) 180? (rect) ) w ( s s o l r e w o p l a t o t m u m i x a m total output current (a) maximum allowable ambient temperature (c) 0255075100125 0.08 k/w 0.1 k/w 0.16 k/w 0.25 k /w 0.4 k/w 1 k/w rthsa = 0.04 k/w - delta r 0 200 400 600 800 1000 1200 1400 0 100 200 300 400 50 0 120? (rect)
VS-VSKT152/04pbf www.vishay.com vishay semiconductors revision: 11-apr-14 6 document number: 94514 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 10 - on-state voltage drop charac teristics fig. 11 - thermal impedance z thjc characteristics fig. 12 - gate characteristics instantaneous on-state voltage (v) instantaneous on-state current (a) 1 10 100 1000 0.5 1 1.5 2 2.5 vskt152 per junction tj = 25?c tj = 125?c square wave pulse duration (s) transient thermal impedance z thjc (k/w) 0.001 0.01 0.1 1 0.001 0.01 0.1 1 steady state value rthjc = 0.182 k/w (dc operation) vskt152 instantaneous gate current (a) instantaneous gate voltage (v) 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 (b) (a) rectangular gate pulse (4) (3) (2) (1) tj = -40 ? c tj = 25 ?c tj = 125 ?c a)recommended load line for b)recommended load line for vgd igd (1) pgm = 200 w, tp = 300 s (2) pgm = 60 w, tp = 1 ms (3) pgm = 30 w, tp = 2 ms (4) pgm = 12 w, tp = 5 ms <= 30% rated di/dt: 15 v, 40 ohms tr = 1 s, tp >= 6 s rated di/dt: 20 v, 20 ohms tr = 0.5 s, tp >= 6 s frequency limited by pg(av) vskt152
VS-VSKT152/04pbf www.vishay.com vishay semiconductors revision: 11-apr-14 7 document number: 94514 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table note ? to order the optional hardware go to www.vishay.com/doc?95172 circuit configuration circuit description circuit configuration code circuit drawing two scrs doubler circuit t links to related documents dimensions www.vishay.com/doc?95067 1 2 - circuit configuration 3 - current rating 4 - voltage rating (04 = 400 v) 5 - pbf = lead (pb)-free device code 5 1 3 2 4 vs-vs 04 pbf kt 152 - vishay semiconductors product 5 4 3 6 7 1 2 12 5 4 7 6 3 - + ~
document number: 95067 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 15-feb-08 1 int-a-pak igbt/thyristor outline dimensions vishay semiconductors dimensions in millimeters (inches) 80 (3.15) ? 6.5 (0.25 dia) 30 (1.18) 9 (0.33) 7 (0.28) 28 (1.10) 29 (1.15) 37 (1.44) 5 (0.20) 2.8 x 0.8 (0.11 x 0.03) 7 6 5 4 123 23 (0.91) 23 (0.91) 17 (0.67) 35 (1.38) 14.5 (0.57) 3 screws m6 x 10 66 (2.60) 94 (3.70)
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